Syed Naveed Riaz Kazmi

RF MEMS, NEMS/MEMS for Biomedical Applications, Nano/Micro Fabrication, Solar Cells, Energy Harvesters, MEMS Reliability.

S. N. R. Kazmi, C. Salm and J. Schmitz, “Deep reactive ion etching of in-situ boron doped LPCVD Ge_0.7Si_0.3 using SF₆ and O₂ plasma”, Journal of Microelectronic Engineering (Elsevier), Vol. 110, pp. 311-314, (2013).
S. N. R. Kazmi, C. Salm and J. Schmitz, “Mechanical resonators on CMOS for integrated passive band pass filters”, Proceedings of 14^th International Conference on Ultimate Integration on Silicon (ULIS), Warwick, UK, (2013).
S. N. R. Kazmi, A. A. I. Aarnink, C. Salm and J. Schmitz, “Low-Stress Highly-Conductive In-Situ Boron Doped Ge_0.7Si_0.3 Films by LPCVD”, ECS Journal of Solid State Science and Technology, Vol. 1, Issue 5, P222-P226, (2012).
S. N. R. Kazmi, A. A. I. Aarnink, C. Salm and J. Schmitz, “CMOS-MEMS Post Processing Compatible Capacitively Transduced GeSi Resonators”, Proceedings of International IEEE Frequency Control Symposium, Baltimore, Maryland, USA, (2012).
S. N. R. Kazmi, A. A. I. Aarnink, C. Salm and J. Schmitz, “Low Stress In Situ Boron Doped Poly SiGe Layers for MEMS Modular Integration with CMOS”, Electrochemical Society Transaction (ECST), Montreal, Canada, (2011).
S. N. R. Kazmi, C. Salm, and J. Schmitz, “Materials selection for low temperature processed high Q resonators using Ashby approach”, Proceedings of 12th Annual workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), Veldhoven, The Netherlands, (2009).

B.Sc. in Physics and Mathematics, Islamia University, Bahawalpur, Pakistan – (1998).
M.Sc. in Physics, Quaid-I-Azam University, Islamabad, Pakistan – (2001).
MS leading to PhD in Microsystems Technologies, University of Twente, Enschede, The Netherlands – (2014).